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Semiconductors
A semiconductor is a material that behaves somewhere between a conductor and an insulator. In short, semiconductors transmit electricity more readily than an insulator, but less readily than a conductor. Wattbits.com boast a wide range of different semiconductors (MOSFET, IGBT, triac, Schottky, thyristors and diodes) and semiconductor accessories, the like of which are the foundation of modern electronics and are found across the telecommunications, computing, automotive, aerospace, military, medical and instrumentation industries. And don’t forget, spend over £1000 at Wattbits.com, on semiconductors or any other high quality electrical and electronic components, and you’ll qualify for our best deals and biggest discounts.
| Image | Part Number | Description | Manufacturer | Stock Level | Price (exc. VAT) |
Purchase | RoHS | Extended Range |
Datasheet |
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DSEI2X121-02A |
Diode, Dual, Fast recovery, Module / Screw terminal, Ifav = 2x123A, Vrrm = 200V, trr = 35ns, Irm = 12A, 150deg C, SOT227B Double - not connected IXYS DSEI2X121-02A |
IXYS |
Available: 4 MOQ: 1 |
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DSEI2X61-02A |
Diode, Dual, Fast recovery, Module / Screw terminal, Ifav = 2x71A, Vrrm = 200V, trr = 35ns, Irm = 8A, 150deg C, SOT227B Double - not connected IXYS DSEI2X61-02A |
IXYS |
MOQ: 1 |
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DSEI2X61-12B |
Diode, Dual, Fast recovery, Module / Screw terminal, Ifav = 2x52A, Vrrm = 1200V, trr = 40ns, Irm = 32A, 150deg C, SOT227B Double - not connected IXYS DSEI2X61-12B |
IXYS |
MOQ: 1 |
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DSEI30-10A |
Diode, Single, Fast recovery, Discrete / Through hole, Ifav = 30A, Vrrm = 1000V, trr = 35ns, Irm = 16A, 150deg C, TO247AD IXYS DSEI30-10A |
IXYS |
MOQ: 5 |
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DSEK60-06A |
Diode, Dual, Fast recovery, Discrete / Through hole, Ifav = 2x30A, Vrrm = 600V, trr = 35ns, Irm = 10A, 150deg C, TO247AD Common cathode IXYS DSEK60-06A Alternative Products Available |
IXYS |
MOQ: 5 |
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DSEK60-12A |
Diode, Dual, Fast recovery, Discrete / Through hole, Ifav = 2x26A, Vrrm = 1200V, trr = 40ns, Irm = 16A, 150deg C, TO247AD Common cathode IXYS DSEK60-12A |
IXYS |
Available: 30 MOQ: 5 |
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DSEP2X35-06C |
Diode, Dual, Fast recovery, Module / Screw terminal, Ifav = 2x35A, Vrrm = 600V, trr = 20ns, Irm = 4.5A, 150deg C, SOT227B Double - not connected IXYS DSEP2X35-06C Special Instructions: Not for new designs |
IXYS |
Available: 5 MOQ: 1 |
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DSEP2X61-03A |
Diode, Dual, Fast recovery, Module / Screw terminal, Ifav = 2x60A, Vrrm = 300V, trr = 30ns, Irm = 4A, 150deg C, SOT227B Double - not connected IXYS DSEP2X61-03A Special Instructions: Not for new designs |
IXYS |
Available: 5 MOQ: 1 |
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DSEP6-06AS |
Diode, Single, Fast recovery, Discrete / SMD, Ifav = 6A, Vrrm = 600V, trr = 20ns, Irm = 4.4A, 150deg C, TO252AA IXYS DSEP6-06AS |
IXYS |
Available: 60 MOQ: 5 |
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DSS16-01A |
Diode, Single, Schottky, Discrete / Through hole, Ifav = 16A, Vrrm = 100V, Vf = 0.65V, 175deg C, TO220AC IXYS DSS16-01A |
IXYS |
Available: 50 MOQ: 5 |
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IXBD4410SI |
MOSFET / IGBT Driver, Single, Through hole, Ipk = 2A IXYS IXBD4410SI |
IXYS |
Available: 50 MOQ: 5 |
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IXBOD1-06 |
Diode, Single, Break over, Discrete / Through hole, Ibo = 0.00002A, Vbo = 600V, Vh = 4 to 8V, Iav = 0.9A, 125deg C, 9x10 single ended IXYS IXBOD1-06 |
IXYS |
MOQ: 1 |
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IXFH16N50P |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 16A, Vdss = 500V, Rdson = 0.4ohms, 150deg C, TO247AD IXYS IXFH16N50P |
IXYS |
Available: 30 MOQ: 5 |
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IXFH18N60P |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 18A, Vdss = 600V, Rdson = 0.4ohms, 150deg C, TO247AD IXYS IXFH18N60P Alternative Products Available |
IXYS |
Available: 30 MOQ: 5 |
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IXFH26N60P |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 26A, Vdss = 600V, Rdson = 0.27ohms, 150deg C, TO247AD IXYS IXFH26N60P Alternative Products Available |
IXYS |
Available: 30 MOQ: 1 |
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IXFH36N60P |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 36A, Vdss = 600V, Rdson = 0.19ohms, 150deg C, TO247AD IXYS IXFH36N60P |
IXYS |
Available: 30 MOQ: 1 |
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IXFH52N30P |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 52A, Vdss = 300V, Rdson = 0.066ohms, 150deg C, TO247AD IXYS IXFH52N30P |
IXYS |
Available: 5 MOQ: 5 |
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IXFK48N50 |
MOSFET, Single, Discrete / Through hole, With inverse diode Id (@Tc=25C) = 44A, Vdss = 500V, Rdson = 0.14ohms, 150deg C, TO264 IXYS IXFK48N50 Alternative Products Available |
IXYS |
Available: 30 MOQ: 1 |
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MCD132-16IO1 |
Thyristor / Diode, Dual, Standard recovery, Module / Screw terminal, Ifav = 130A, Vrrm = 1600V, = , Ifsm = 4750A, 125deg C, 34x94 Phase leg IXYS MCD132-16IO1 Alternative Products Available |
IXYS |
Available: 12 MOQ: 1 |
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MCD162-16IO1 |
Thyristor / Diode, Dual, Standard recovery, Module / Screw terminal, Ifav = 181A, Vrrm = 1600V, = , Ifsm = 6000A, 125deg C, 34x94 Phase leg IXYS MCD162-16IO1 Alternative Products Available |
IXYS |
MOQ: 1 |
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